CMP
CMP Foundry service
CMP foundry services
Representative examples of CMP process
| Damascene (embedded) CMP |
CMP of polycrystalline | CMP before bonding |
| CMP for TSV | CMP to remove step height | CMP before hybrid bonding |
| CMP to adjust film thickness | CMP to improve surface roughness | CMP of difficult-to-cut material |
- ・CMP before bonding processes such as room temperature bonding, C2W, plasma-activated bonding
- ・CMP to expose metal electrode (gold rush process) / CMP of insulation layer
- ・Cu CMP with ultra-high removal rate
- ・CMP process for Si power devices
- ・CMP process for HDD (track media, patterned media)
- ・CMP of single crystal and polycrystalline difficult-to-cut materials (SiC, GaN, etc...)
- ・Other CMP foundry services
D-process is a front runner of CMP foundry
- We have expanded our business by our slurries and planarization technologies.
- Au surface roughness Ra < 0.2nm
- Cu ultra-high removal rate; over 10 μm/min
- Au removal rate; over 1 μm/min
- SiO2 surface roughness Ra < 0.1nm
- Polycrystalline material surface roughness Ra ＜ 0.3nm
- Controlling of removal rate selectivity of various materials
D-process optimize our slurries for various device wafers!
Abrasives, etchants, inhibitors, oxidants, storage stabilizers, contact angle adjusters, thickeners, lubricants, agents for step height removal, pH buffers, etc.
Slurry/horizonor for CMP foundry services
D-process optimize abrasives and chemicals in slurry for various devices and materials
D-process optimize abrasives and chemicals in slurry for various devices and materials
Achievement of super-smooth surface by CMP
Step height reduction
CMP of difficult-to-cut materials & polycrystalline materials
Cu CMP process with ultra-high removal rate
CMP process for Cu-SiO₂ hybrid bonding
